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S T M4472
S amHop Microelectronics C orp. Jan.7 ,2008 ver1.0
N- Channel Enhancement Mode Field Effect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S S uper high dense cell design for low R DS (ON).
ID
7A
R DS (ON) ( m i ) Max
24 @ V G S = 10V 30 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
S O-8 1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol VDS VGS 25 C 70 C IDM IS PD Ta=70 C TJ, TS TG ID
Limit 40 20 7 5.9 28 1.7 3 2.1 -55 to 150
Unit V V A A A A W C
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a
1
R JA
40
C /W
S T M4472
N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
Parameter
5
S ymbol
BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS
c
Condition
VGS = 0V, ID = 250uA VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 7A VGS =4.5V, ID= 5A VDS = 5V, VGS = 10V VDS = 5V, ID = 7A
Min Typ C Max Unit
40 1 10 1 1.8 18 23 15 12.5 700 3 V uA uA V
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 24 m ohm 30 m ohm A S
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
CISS COSS CRSS
c
VDS =20 V, VGS = 0V f =1.0MHZ
PF PF PF
140 80 13.4 12.5 43.3 8.5 13.5 6.7 1.8 2.4
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 20V ID = 1 A VGS = 10V R GE N = 3.3 ohm VDS =20V, ID =7A,VGS =10V VDS =20V, ID =7A,VGS =4.5V VDS =20V, ID = 7 A VGS =4.5V
2
ns ns ns ns nC nC nC nC
S T M4472
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is =1.7A
Min Typ Max Unit
0.78 1.2 V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
45 VG S =10V 36 15 VG S =4.5V VG S =4V 12
ID, Drain C urrent(A)
ID, Drain C urrent (A)
-55 C 9 T j=125 C 6 25 C 3 0 0.0
27 VG S =3.5V 18 VG S =3V
9 0 0 0.5 1.0 1.5 2.0
2.5
3.0
0.7
1.4
2.1
2.8
3.5
4.2
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
48
1.75
R DS (ON), On-R es is tance Normalized
40
1.60 1.45 1.30 1.15 1.00 0.85
V G S =4.5V ID=5A V G S =10V ID=7A
R DS (on) (m )
32 V G S =4.5V 24 16 8 1 V G S =10V
1
4
8
12
16
20
0
25
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T M4472
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
60
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
ID=7A
Is , S ource-drain current (A)
50
10.0 5.0
125 C
R DS (on) (m )
40 125 C 30 20 10 0 75 C 25 C
75 C
25 C
0
2
4
6
8
10
1.0
0
0.25
0.50
0.75
1.00
1.25
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T M4472
V G S , G ate to S ource V oltage (V )
1200 1000
10 8 6 4 2 0 VDS =20V ID=7A
C , C apacitance (pF )
800 600 400 200 C rs s 0 0 5 10 15 C oss
C is s
5
20
25
30
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
250
S witching T ime (ns ) ID, Drain C urrent (A)
50 30 10
RD ON S( )L im it
10 ms
100 60
Tf
TD(off) Tr
10
1s
DC
0m
s
TD(on)
10
1
V DS =20V ,ID=1A
0.1 0.03
1 1
V G S =10V
VGS =10V S ingle P ulse T A=25 C 0.1 1 10 40
6 10
60 100 300 600
R g, G ate R es is tance ()
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe O perating Area
9
Thermal Resistance
1
0.5
0.2
0.1
0.1 0.05 0.02 0.01
P DM t1 t2 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
0.01 0.00001 0.0001
Single Pulse 0.001 0.01 0.1 1 10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
5
S T M4472
PAC K AG E OUT LINE DIME NS IONS S O-8
1 L
E D
0.015X45
A
0.008 TYP.
e
0.05 TYP.
B
0.016 TYP.
A1
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
6
S T M4472
SO-8 Tape and Reel Data
SO-8 Carrier Tape
unit:
PACKAGE SOP 8N 150 A0
6.40
B0
5.20
K0
2.10
D0
1.5 (MIN)
D1
1.5 + 0.1 - 0.0
E
12.0 0.3
E1
1.75
E2
5.5 0.05
P0
8.0
P1
4.0
P2
2.0 0.05
T
0.3 0.05
SO-8 Reel
UNIT:
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
V
7

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